Near surface transition layer model of MBE growth
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference9 articles.
1. The nature of molecular beam epitaxial growth examined via computer simulations
2. Quasi-gas transition layers occurring in MBE growth of microdevices and superlattices
3. Growth and doping of gallium arsenide using molecular beam epitaxy (MBE): Thermodynamic and kinetic aspects
4. Molecular beam epitaxy
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1. Kinetic Analysis of Surface Adsorption Layer in GaAs(001) Metalorganic Vapor Phase Epitaxy byIn situReflectance Anisotropy Spectroscopy;Japanese Journal of Applied Physics;2007-10-09
2. Comparison of Processes Occurring during Silver Adsorption on Copper and Nickel at Elevated Temperatures;Acta Physica Polonica A;1996-01
3. The effect of the MBE growth rate on the surface phase diagram for GaAs (001);Thin Solid Films;1995-10
4. Approaches to understanding MBE growth phenomena;Thin Solid Films;1995-10
5. Description of the Atomic Layer Epitaxial Growth Based on Kinetic Equation Techniques;Physica Status Solidi (a);1992-08-16
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