AlGaInP/GaInP double-heterostructure orange light-emitting diodes on GaAsP substrates prepared by metalorganic vapor-phase epitaxy
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference19 articles.
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4. The growth and properties of high performance AlGalnP emitters using a lattice mismatched GaP window layer
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1. Optical gain analysis of GaInP/AlGaInP nanoscale heterostructure for applications in visible light emission;Materials Today: Proceedings;2022
2. Structural, lattice dynamics and thermodynamic properties of GaAs1-xPx from first-principles calculations;Journal of Alloys and Compounds;2020-03
3. Electronic properties of GaPxAs1-x ternary alloy: A first-principles study;Journal of Alloys and Compounds;2016-08
4. Metamorphic GaAsP buffers for growth of wide-bandgap InGaP solar cells;Journal of Applied Physics;2011-01
5. Comparison of compressive and tensile relaxed composition-graded GaAsP and (Al)InGaP substrates;Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;2010-03
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