Thermodynamic equilibrium displacement controlled epitaxial growth of GaAs
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference15 articles.
1. The Use of Close Spacing in Chemical-Transport Systems for Growing Epitaxial Layers of Semiconductors
2. D. Côté, J.P. Dodelet, B.A. Lombos and J.I. Dickson, J. Electrochem. Soc., submitted.
3. Outdiffusion of deep electron traps in epitaxial GaAs
4. Origin of the 0.82‐eV electron trap in GaAs and its annihilation by shallow donors
5. Proc. 10th Intern. Symp. on GaAs and Related Compounds;Lagowski,1983
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