Structural and luminescence properties of stoichiometry-related faulted loops in Czochralski-grown Fe-doped InP-Reference-Cited by-同舟云学术

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Structural and luminescence properties of stoichiometry-related faulted loops in Czochralski-grown Fe-doped InP

Published:1986-12 Issue:1-3 Volume:79 Page:503-507
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Warwick C.A.,Booker G.R.

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference7 articles.

1. Substrate effects on performance of InP MOSFETs

2. Etch features in Czochralski-grown single crystal indium phosphide

3. The identification of faulted prismatic dislocation loops in single crystals of undoped InP

4. The nature of prismatic dislocation loops in undoped InP

5. Microscopy of Semiconducting Materials 1983;Warwick,1983

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Cathodoluminescence from defects in electron-irradiated InP;Materials Science and Engineering: B;1994-05

2. Inspection of n-type InP crystals by scanning photoluminescence measurements;Semiconductor Science and Technology;1992-01-01

3. Assessment of Fe‐doped semi‐insulating InP crystals by scanning photoluminescence measurements;Journal of Applied Physics;1990-07-15

4. Characterization of Fe-doped semi-insulating InP by low temperature and room temperature spatially resolved photoluminescence;Journal of Crystal Growth;1989-07

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