Growth temperature dependence of the interfacet migration in chemical beam epitaxy of InP on non-planar substrates
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference12 articles.
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4. Code: A novel MOVPE technique for the single stage growth of buried ridge double heterostructure lasers and waveguides
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1. Selective Area Masked Growth (Nano to Micro);Handbook of Crystal Growth;2015
2. Nonplanar nanoselective area growth of InGaAs/InP;Quantum Dots and Nanostructures: Synthesis, Characterization, and Modeling XI;2014-02-19
3. Shadowing and mask opening effects during selective-area vapor–liquid–solid growth of InP nanowires by metalorganic molecular beam epitaxy;Nanotechnology;2013-10-31
4. Selective epitaxy of semiconductor nanopyramids for nanophotonics;Nanotechnology;2010-06-29
5. Improving photoluminescence of highly strained 1.32μm GaAsSb/GaAs multiple quantum wells grown on misorientation substrate;Journal of Crystal Growth;2008-11
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