Growth and doping of Si and SiGe films by hydride gas-source molecular beam epitaxy
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference19 articles.
1. Growth anisotropy observed on Si(001) surfaces during Si-GSMBE using disilane
2. Growth dynamics studied by RHEED during epitaxy from gaseous hydrides
3. Adsorption and dissociation of disilane on Si(001) studied by STM
4. Role of hydrogen desorption in the chemical-vapor deposition of Si(100) epitaxial films using disilane
5. Thermal reactions of disilane on Si(100) studied by synchrotron-radiation photoemission
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1. Surfactant effect of antimony addition to the morphology of self-catalyzed InAs1−x Sb x nanowires;Nano Research;2014-12-12
2. Vacuum hydride epitaxy of silicon: kinetics of monosilane pyrolysis on the growth surface;Semiconductors;2011-04
3. Suppression of the vapor–liquid–solid growth of silicon nanowires by antimony addition;Nanotechnology;2008-12-11
4. Quantum Chemistry Based Statistical Mechanical Model of Hydrogen Desorption from Si(100)-2 × 1, Ge(100)-2 × 1, and SiGe Alloy Surfaces;The Journal of Physical Chemistry B;2004-11-01
5. A Density Functional Theory Study on the Effect of Ge Alloying on Hydrogen Desorption from SiGe Alloy Surfaces;The Journal of Physical Chemistry B;2004-04-27
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