Low temperature epitaxial growth of InP by remote plasma-assisted metalorganic chemical vapor deposition
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference10 articles.
1. Plasma-assisted epitaxy of InAs layers on GaAs
2. Excimer laser induced deposition of InP and indium‐oxide films
3. MOCVD Growth of InP Using Plasma Pre-Cracking
4. The design of an ECR plasma system and its application to InP grown by CBE
5. Remote plasma enhanced chemical vapor deposition of GaP with in situ generation of phosphine precursors
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1. Integration of piezoelectric (Pb, La)TiO[sub 3] on (100)InP by using a CeO[sub 2] buffer layer;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;2001
2. Low-temperature epitaxial growth of InP by remote plasma-assisted metalorganic chemical vapour deposition;Journal of Crystal Growth;1996-09
3. Remote deposition of scratch resistant films by use of slot antenna microwave plasma source;Thin Solid Films;1996-08
4. Phosphorus ablation process as a hydrogen atom probe in a remote H2 plasma reactor;Applied Physics Letters;1995-06-26
5. Growth of InP in a Novel Remote-Plasma MOCVD Apparatus : an Approach to Improve Process and Material Properties;Le Journal de Physique IV;1995-06
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