Characterization of InP grown by low-pressure MOVPE using ethyldimethylindium and tertiarybutylphosphine
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference11 articles.
1. Comparison of ethyldimethylindium (EDMIn) and trimethylindium (TMIn) for GaInAs and InP growth by LP-MOVPE
2. OMVPE growth of InP and Ga0.47ln0.53as using ethyldimethylindium
3. MOVPE growth of InP using isobutylphosphine and tert-butylphosphine
4. Use of tertiarybutylphosphine for the growth of InP and GaAs1-xPx
5. High quality InP layers grown by organometallic vapor phase epitaxy using tertiarybutylphosphine and phosphine
Cited by 4 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Substituent Effects on Indium−Phosphorus Bonding in (4-RC6H4S)3In·PR‘3 Adducts (R = H, Me, F; R‘ = Et, Cy, Ph): A Spectroscopic, Structural, and Thermal Decomposition Study;Inorganic Chemistry;2005-11-15
2. Developments in CVD Delivery Systems: A Chemist’s Perspective on the Chemical and Physical Interactions Between Precursors;Chemical Vapor Deposition;2002-12-03
3. Synthesis, mass spectrometry and NMR spectroscopy studies of the (CH3)2 In(C2H5) system: X-ray crystal structure of a diphosphine-bridged complex;Journal of Organometallic Chemistry;1996-04
4. Comparison of alternate P-sources to phosphine in the metalorganic vapor phase epitaxy growth of p-AlGaInP;Journal of Crystal Growth;1994-12
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