Comparison of alternate P-sources to phosphine in the metalorganic vapor phase epitaxy growth of p-AlGaInP
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference14 articles.
1. Extremely low threshold current operation of 638 nm GaInP/AlGaInP strained MQW lasers
2. High power and high‐temperature operation of GaInP/AlGaInP strained multiple quantum well lasers
3. Effects of Growth Parameters on Oxygen Incorporation into InGaAlP Grown by Metalorganic Chemical Vapor Deposition
4. Characterization of InP grown by low-pressure MOVPE using ethyldimethylindium and tertiarybutylphosphine
5. MOCVD of Ga0.52In0.48P Using Tertiarybutylphosphine
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1. Metalorganic vapor-phase epitaxy of III/V phosphides with tertiarybutylphosphine and tertiarybutylarsine;Journal of Crystal Growth;2004-10
2. 650-nm AlGaInP multiple-quantum-well lasers grown by metalorganic chemical vapor deposition using tertiarybutylphosphine;Applied Physics Letters;2003-07-28
3. High quality AlGaInP epilayers grown by MOCVD using TBP for red lasers;Journal of Crystal Growth;2003-06
4. Nondestructive assessment of In0.48(Ga1−xAlx)0.52P films grown on GaAs (001) by low pressure metalorganic chemical vapor deposition;Journal of Applied Physics;1999-04
5. Specific Materials;Organometallic Vapor-Phase Epitaxy;1999
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