Gas-source MBE growth of n-type InP using TEI, PH3, and Si2H6
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference14 articles.
1. J. Crystal Growth,1990
2. Doping studies using thermal beams in chemical‐beam epitaxy
3. InGaAs/InPp‐i‐nphotodiodes grown by chemical beam epitaxy
4. Chemical beam epitaxy of indium phosphide
5. Electrical and optical properties of silicon doped InP grown by gas source MBE
Cited by 3 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Dopant incorporation behaviour during MOMBE growth of InP on (1 0 0), {1 1 1} and nonplanar surfaces;Journal of Crystal Growth;1998-06
2. Molecular beam epitaxy technology of III-V compound semiconductors for optoelectronic applications;Proceedings of the IEEE;1997
3. Hydrogen desorption process of Si(100)/PH3;Journal of Applied Physics;1995-10-15
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