Integration of a CdTe interdigitated photoconductor with AlGaAs field-effect transistor-Reference-Cited by-同舟云学术

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Integration of a CdTe interdigitated photoconductor with AlGaAs field-effect transistor

Published:1990-04 Issue:1-4 Volume:101 Page:1013-1017
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Filippozzi J.L.,Therez F.,Estève D.,Fallahi M.,Kendil D.,Da Silva M.,Barbe M.,Cohen-Solal G.

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference9 articles.

1. Growth of CdTe on GaAs by hot‐wall epitaxy and its stress relaxation

2. Growth and properties of Hg1-xCdxTe on GaAs, with x − 0.27

3. Thesis No. 378;Fallahi,1988

4. Determination of the Basic Device Parameters of a GaAs MESFET

5. Thin film CdTe solar cells

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2. Effects of Ligand Exchange Reactions on the Composition of Cd1-yZnyTe Grown by Metalorganic Vapor-Phase Epitaxy;The Journal of Physical Chemistry B;1997-06-01

3. Evaluation of a zero-discharge reactor for the chemical vapor deposition of mercury telluride;Journal of Crystal Growth;1997-04

4. Controlling the group II composition in CdZnTe alloys grown by organometallic vapor phase epitaxy: a kinetic model;Journal of Crystal Growth;1996-03

5. Computer optimization of multispectral solar cells based on GaAs and Hg1−xCdxTe;Physica Status Solidi (a);1995-08-16

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