Dislocation reduction in HgCdTe epilayers on GaAs by using CdTe/CdZnTe strained-layer superlattices in CdTe layers
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference10 articles.
1. CdTe-GaAs(100) interface: MBE growth, rheed and XPS characterization
2. Growth and properties of Hg1−xCdxTe on GaAs substrates by organometallic vapor‐phase epitaxy
3. Dislocation density reduction by thermal annealing of HgCdTe epilayers grown by molecular beam epitaxy on GaAs substrates
4. Structural properties of Hg1−xZnxTe‐CdTe strained layer superlattices and the reduction of threading dislocations from a CdTe buffer layer
5. Structural properties of CdTe‐ZnTe strained‐layer superlattice grown on GaAs by hot‐wall epitaxy
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2. Identifying threading dislocations in CdTe films by reciprocal space mapping and defect decoration etching;Journal of Applied Physics;2018-08-28
3. Preparation and electrical characterization of Cd0.8Zn0.2Te/Si thin films;Vacuum;2004-01
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5. Transmission electron microscope observations of dislocations in heteroepitaxial layers of CdTe-(CdHg)Te on GaAs;Materials Science and Engineering: B;1997-03
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