Growth of GaAs, InAs, and GaAs/InAs superlattice structures at low substrate temperature by MOVPE-Reference-Cited by-同舟云学术

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Growth of GaAs, InAs, and GaAs/InAs superlattice structures at low substrate temperature by MOVPE

Published:1988 Issue:1-4 Volume:93 Page:342-346
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Ohno H.,Ohtsuka S.,Ohuchi A.,Matsubara T.,Hasegawa H.

Funder

Ministry of Education, Culture, Sports, Science and Technology

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference14 articles.

1. A New High-Electron Mobility Monolayer Superlattice

2. Growth of a (GaAs)n/(InAs)nSuperlattice Semiconductor by Molecular Beam Epitaxy

3. Growth of a novel InAs‐GaAs strained layer superlattice on InP

4. (InAs)1(GaAs)1Layered Crystal Grown by MOCVD

Cited by 23 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Incorporation of indium and gallium in atomic layer epitaxy of InGaAs on InP substrates;Journal of Crystal Growth;2011-04

2. Control of carbon incorporation in AlAs grown by atomic layer epitaxy using variously orientated substrates;Journal of Materials Science: Materials in Electronics;2000

3. Mechanism of atomic layer epitaxy of AlAs;Journal of Crystal Growth;1998-11

4. Adjusting trimethylgallium injection time to explore atomic layer epitaxy of GaAs between 425 and 500°C by organometallic vapor phase epitaxy;Journal of Electronic Materials;1994-02

5. High electron mobility in (InAs)n(GaAs)n short period superlattices grown by MOVPE for high-electron mobility transistor structure;Journal of Electronic Materials;1994-02

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