Less hazardous MOCVD growth of InP using solid red-phosphorous and H2 plasma
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference9 articles.
1. MOVPE growth of InP using isobutylphosphine and tert-butylphosphine
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Cited by 14 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. In-situ production of PH3 from red phosphorus and atomic hydrogen;Chemical Physics Letters;2011-09
2. In situ monitoring of MOVPE growth by combined spectroscopic ellipsometry and reflectance-difference spectroscopy;Thin Solid Films;2000-03
3. Study of the phosphine plasma decomposition and its formation by ablation of red phosphorus in hydrogen plasma;Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;1995-03
4. MOCVD of Compound Semiconductor Layers;Handbook of Compound Semiconductors;1995
5. Chemical Vapor Deposition of Semiconductor Materials;Surface Engineering;1994
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