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A parametric investigation of GaAs epitaxial growth uniformity in a high speed, rotating-disk MOCVD reactor

  • Published:1988 Issue:1-4 Volume:93 Page:220-227
  • ISSN:0022-0248
  • Container-title:Journal of Crystal Growth
  • language:en
  • Short-container-title:Journal of Crystal Growth

Author:

Tompa G.S.,McKee M.A.,Beckham C.,Zawadzki P.A.,Colabella J.M.,Reinert P.D.,Capuder K.,Stall R.A.,Norris P.E.

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

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3. GaN‐Based Materials;Nitride Semiconductor Technology;2020-08-03

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5. Direct and fast growth of GaAs thin films on glass and polyethylene terephthalate substrates using a thermionic vacuum arc;Journal of Materials Science: Materials in Electronics;2015-01-08
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