Growth and characterization of InP/GaAs epilayers on Si substrates by low-pressure metalorganic vapor phase epitaxy
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference10 articles.
1. Heteroepitaxial growth of InP directly on Si by low pressure metalorganic chemical vapor deposition
2. High‐quality GaInAsP/InP heterostructures grown by low‐pressure metalorganic chemical vapor deposition on silicon substrates
3. Low pressure metalorganic vapor phase epitaxy of InP using a trimethylindium‐trimethylphosphine adduct source
4. Low Temperature Surface Cleaning of Silicon and Its Application to Silicon MBE
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1. Chemical Vapor Deposition of Semiconductor Materials;Surface Engineering;1994
2. Remote plasma enhanced chemical vapor deposition of GaP with in situ generation of phosphine precursors;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;1992-05
3. Observation of the first-order phase transition from single to double stepped Si (001) in metalorganic chemical vapor deposition of InP on Si;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;1991-07
4. LP-MOVPE growth of antiphase domain free InP on (001) Si using low temperature processing;Journal of Crystal Growth;1991-01
5. Relaxed lattice-mismatched growth of III–V semiconductors;Progress in Crystal Growth and Characterization of Materials;1991-01
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