LP-MOCVD growth and characterization of undoped and modulation doped GaInAsP/InP and GaInAs/InP multi quantum wells-Reference-Cited by-同舟云学术

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LP-MOCVD growth and characterization of undoped and modulation doped GaInAsP/InP and GaInAs/InP multi quantum wells

Published:1988 Issue:1-4 Volume:93 Page:382-388
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Grützmacher D.,Meyer R.,Zachau M.,Helgesen P.,Zrenner A.,Wolter K.,Jürgensen H.,Koch F.,Balk P.

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference19 articles.

1. Low pressure metalorganic chemical vapor deposition of InP and related compounds

2. Chemical beam epitaxial growth of very low threshold Ga0.47In0.53As/InP double‐heterostructure and multiquantum well lasers

3. InGaAsP distributed feedback multiquantum well laser

4. Long-wavelength (1.3- to 1.6-µm) detectors for fiber-optical communications

5. F. Müller, V. Petrova-Koch, M. Zachau, F. Koch, D. Grützmacher, R. Meyer, H. Jürgensen and P. Balk, Semicond. Sci. Technol., in press.

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