OMVPE growth of the new semiconductor alloys GaP1−xSbx and InP1−xSbx
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference22 articles.
1. Calculation of ternary and quaternary III–V phase diagrams
2. Miscibility gaps and spinodal decomposition in III/V quaternary alloys of the typeAxByC1−x−yD
3. M.J. Jou and G.B. Stringfellow, unpublished result.
4. Semiconductor Materials for 2∼4 µm Region Optical Sources and Room Temperature Operation of InGaAsSb/AlGaAsSb DH Lasers
5. InAsSbP-InAs Superlattice Grown by Organometallic VPE Method
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1. Opto‐Electronic Properties of Gap1‐xSbx Alloys for IR Applications;Crystal Research and Technology;2024-06-12
2. Structural and optical properties of InP1-xSbx/n-InAs epilayers grown by gas source molecular beam epitaxy;Applied Surface Science;2023-11
3. Systematic Assessment of Phonon and Optical Characteristics for Gas-Source Molecular Beam Epitaxy-Grown InP1−xSbx/n-InAs Epifilms;Crystals;2023-09-11
4. Epitaxial growth of metastable semiconductor alloys;Journal of Crystal Growth;2021-06
5. Tailoring of elastic, optoelectronic, and thermal properties of antimony doped indium phosphorus alloys for optoelectronic applications;Journal of Alloys and Compounds;2021-03
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