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Quantum wells with zincblende MnTe barriers

Published:1991-05 Issue:1-4 Volume:111 Page:767-771
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Han J.,Durbin S.M.,Gunshor R.L.,Kobayashi M.,Menke D.R.,Pelekanos N.,Hagerott M.,Nurmikko A.V.,Nakamura Y.,Otsuka N.

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference13 articles.

1. Zinc‐blende MnTe: Epilayers and quantum well structures

2. ZnTe/MnTe: A new metastable wide gap II–VI heterostructure

3. Optical properties and electronic structure of crossroads material MnTe

4. Energy gap, excitonic, and ‘‘internal’’Mn2+optical transition in Mn-based II-VI diluted magnetic semiconductors

5. II–VI/III–V heterointerfaces: Epilayer-on-epilayer structures

Cited by 11 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. 7.1.2 Quantum wells and superlattices based on CdTe and its alloys;Growth and Structuring;2013

2. Tunnel Diodes;digital Encyclopedia of Applied Physics;2003-04-15

3. II–VI and IV–VI Diluted Magnetic Semiconductors – New Bulk Materials and Low-Dimensional Quantum Structures;Handbook of Magnetic Materials;2003

4. Estimation of Co2+solubility limit in CdTe from lattice parameters, magnetization and spectroscopic characterization;Semiconductor Science and Technology;2001-01-22

5. Chapter 1 MBE Growth and Electrical Properties of Wide Bandgap ZnSe-based II-VI Semiconductors;Semiconductors and Semimetals;1997

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