II–VI/III–V heterointerfaces: Epilayer-on-epilayer structures-Reference-Cited by-同舟云学术

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II–VI/III–V heterointerfaces: Epilayer-on-epilayer structures

Published:1989-02 Issue:1-4 Volume:95 Page:567-571
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Qian Q.-D.,Qiu J.,Glenn J.L.,O Sungki,Gunshor R.L.,Kolodziejski L.A.,Kobayashi M.,Otsuka N.,Melloch M.R.,Cooper J.A.,Haggerott M.,Heyen T.,Nurmikko A.V.

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference15 articles.

1. On the properties of InSb quantum wells

2. A correlation between electron traps and growth processes inn‐GaAs prepared by molecular beam epitaxy

3. Low‐temperature molecular beam epitaxy of gallium arsenide

4. paper presented NATO Advanced Research Workshop on Wide Gap Low Dimensional II–VIs;Gunshor,1988

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Molecular Beam Epitaxy of Wide Gap II-VI Semiconductor Heterostructures;Molecular Beam Epitaxy;1995

2. Investigation of alternative window materials for GaAs solar cells;IEEE Transactions on Electron Devices;1993-04

3. Quantum wells with zincblende MnTe barriers;Journal of Crystal Growth;1991-05

4. Zinc‐blende MnTe: Epilayers and quantum well structures;Applied Physics Letters;1989-11-13

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