The nature and control of morphology and the formation of defects in InGaAs epilayers and InAs/GaAs superlattices grown via MBE on GaAs(100)
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference14 articles.
1. Kinetic aspects of growth front surface morphology and defect formation during molecular-beam epitaxy growth of strained thin films
2. Characteristics of dislocations at strained heteroepitaxial InGaAs/GaAs interfaces
3. Nucleation and defect generation in lattice matched and mismatched heteroepitaxial layers in the GaAs/AlxGa1−xP/Si system
4. Nucleation mechanisms and the elimination of misfit dislocations at mismatched interfaces by reduction in growth area
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2. Interdiffusion phenomena in InGaAs/GaAs superlattice structures;Crystal Research and Technology;2010-03-01
3. Observation of resonant tunneling through single self-assembled InAs quantum dots using electrophotoluminescence spectroscopy;Journal of Applied Physics;2000-05
4. Influence of the surface morphology on the relaxation of low-strained InxGa1 − xAs linear buffer structures;Journal of Crystal Growth;1997-12
5. The role of strain and composition on the morphology of InGaAsP layers grown on 〈0 0 1〉InP substrates;Journal of Crystal Growth;1997-08
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