Uniform and abrupt InGaP/GaAs selectively doped heterostructures grown by MOVPE for HEMT ICs
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference12 articles.
1. Two-dimensional electron gas at interface of a selectively doped InGaP/GaAs heterostructure
2. Selectively Doped n-GaInP/GaAs Heterostructures Grown by MOCVD
3. Proc. GaAs IC Symp.;Kuroda,1984
4. On the low-temperature degradation of (AlGa)As/GaAs modulation-doped field-effect transistors
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