Two-dimensional electron gas at interface of a selectively doped InGaP/GaAs heterostructure-Reference-Cited by-同舟云学术

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Two-dimensional electron gas at interface of a selectively doped InGaP/GaAs heterostructure

Published:1986 Issue:2 Volume:22 Page:73
ISSN:0013-5194
Container-title:Electronics Letters
language:en
Short-container-title:Electron. Lett.

Author:

Cox H.M.,Hayes J.R.,Nottenburg R.N.,Hummel S.G.,Allen S.J.

Publisher

Institution of Engineering and Technology (IET)

Subject

Electrical and Electronic Engineering

Link

https://digital-library.theiet.org/content/journals/10.1049/el_19860050?crawler=true&mimetype=application/pdf

Reference7 articles.

Cited by 6 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Chapter 2 Characteristics of Two-Dimensional Electron Gas in III-V Compound Heterostructures Grown by MBE;Very High Speed Integrated Circuits: Heterostructure;1990

2. GaInP growth by chloride vapor phase epitaxy;Journal of Crystal Growth;1989-05

3. Uniform and abrupt InGaP/GaAs selectively doped heterostructures grown by MOVPE for HEMT ICs;Journal of Crystal Growth;1988

4. Vapor levitation epitaxy: system design and performance;Journal of Crystal Growth;1986-12

5. OMVPE growth of GaxIn1−xP/GaAs(AlyGa1−yAs) heterostructures for optical and electronic device applications;Journal of Crystal Growth;1986-09

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