Dislocations in {012} sapphire ribbons grown by the EFG process
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference5 articles.
1. The preparation and properties of chemically vapor deposited silicon on sapphire and spinel
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1. Growth and characterization of the β-Ga2O3 (011) plane without line-shaped defects;CrystEngComm;2023
2. Formation of the block structure during growth of basal-plane-faceted sapphire ribbons with different widths;Crystallography Reports;2008-11-21
3. Thermoelastic stresses in tubes produced from a melt by Stepanov's method;Journal of Engineering Physics and Thermophysics;1993-04
4. Interface configurations during the directional growth of salol—II. Thermal stress cracking;Acta Metallurgica et Materialia;1993-02
5. A new surface-polishing and defect-revealing etchant for sapphire;Materials Letters;1990-02
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