A consideration of the effect of the thermal boundary layer on CVD growth rates-Reference-Cited by-同舟云学术

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A consideration of the effect of the thermal boundary layer on CVD growth rates

Published:1980-03 Issue:3 Volume:48 Page:394-402
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Hitchman Michael L.

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference19 articles.

1. Heteroepitaxial Semiconductors for Electronic Devices;Berkman,1978

2. M.L. Hitchman and B.J. Curtis, to be published.

3. Boundary Layer Theory;Schlichting,1968

4. The Properties of Gases and Liquids;Reid,1966

5. The epitaxial growth of silicon in horizontal reactors†

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