The effect of controlled impurity incorporation on interfacial roughness in GaAs/AlxGa1−xAs superlattice structures grown by metalorganic vapor phase epitaxy-Reference-Cited by-同舟云学术

The effect of controlled impurity incorporation on interfacial roughness in GaAs/AlxGa1−xAs superlattice structures grown by metalorganic vapor phase epitaxy

Published:1994-12 Issue:1-4 Volume:145 Page:792-798
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Redwing J.M.,Nayak S.,Savage D.E.,Lagally M.G.,Dawson-Elli D.F.,Kuech T.F.

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference15 articles.

1. GaAs and Related Compounds 1980;Wallis,1981

2. GaAs and Related Compounds 1982;Wolford,1983

3. Effects of substrate misorientation on incorporation of ambient oxygen and interfacial roughness in AlGaAs/GaAs heterostructures grown by molecular‐beam epitaxy

4. Properties of high‐purity AlxGa1−xAs grown by the metalorganic vapor‐phase‐epitaxy technique using methyl precursors

5. Quantitative oxygen measurements in OMVPE Al x Ga1−x As grown by methyl precursors

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