Metalorganic vapor phase epitaxial growth of red and infrared vertical-cavity surface-emitting laser diodes
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference22 articles.
1. Low resistance wavelength‐reproduciblep‐type (Al,Ga)As distributed Bragg reflectors grown by molecular beam epitaxy
2. Band‐gap engineered digital alloy interfaces for lower resistance vertical‐cavity surface‐emitting lasers
3. N‐andP‐type dopant profiles in distributed Bragg reflector structures and their effect on resistance
4. Low series resistance high-efficiency GaAs/AlGaAs vertical-cavity surface-emitting lasers with continuously graded mirrors grown by MOCVD
5. Low-threshold current low-voltage vertical-cavity surface-emitting lasers with low-Al-content p-type mirrors grown by MOCVD
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1. Room-temperature lasing of electrically pumped red-emitting InP/(Al0.20Ga0.80)0.51In0.49P quantum dots embedded in a vertical microcavity;Applied Physics Letters;2009-09-28
2. Red single-photon emission from an InP∕GaInP quantum dot embedded in a planar monolithic microcavity;Applied Physics Letters;2008-02-18
3. Comprehensive characterization of MOVPE-grown AlGaAs/AlAs distributed Bragg reflector structures by optical reflectance, X-ray diffraction and atomic force microscopy;Journal of Crystal Growth;2005-02
4. Cavity and Mirror Design for Vertical-Cavity Surface-Emitting Lasers;Springer Series in Photonics;2003
5. Optimization of MOVPE growth for 650nm-emitting VCSELs;Journal of Crystal Growth;2000-12
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