The behavior of dopant incorporation and internal strain in AlxGa1−xAs0.03Sb0.97 grown by molecular beam epitaxy
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
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1. Dopant incorporation in Al 0.9 Ga 0.1 As 0.06 Sb 0.94 grown by molecular beam epitaxy;Journal of Crystal Growth;2017-04
2. Temperature dependent lattice constant of Al0.90Ga0.10AsySb1−y;Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena;2010-05
3. Reduction of hetero-interface resistivity in n-type AlAsSb/GaSb distributed Bragg reflectors;Semiconductor Science and Technology;2008-01-25
4. Room-Temperature AlGaAsSb/InGaAsSb Multi-Quantum-Well Lasers with High Characteristic Temperature;Chinese Physics Letters;2003-07-30
5. Al(x)Ga(1-x)As(y)Sb(1-y), physical properties;Group IV Elements, IV-IV and III-V Compounds. Part b - Electronic, Transport, Optical and Other Properties
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