Structural properties of InN films grown on GaAs substrates: observation of the zincblende polytpe-Reference-Cited by-同舟云学术

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Structural properties of InN films grown on GaAs substrates: observation of the zincblende polytpe

Published:1993-02 Issue:1-4 Volume:127 Page:204-208
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Strite S.,Chandrasekhar D.,Smith David J.,Sariel J.,Chen H.,Teraguchi N.,Morkoç H.

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference14 articles.

1. GaN, AlN, and InN: A review

2. Cubic phase gallium nitride by chemical vapour deposition

3. Low Temperature Growth of GaN and AlN on GaAs Utilizing Metalorganics and Hydrazine

4. Structure Control of GaN Films Grown on (001) GaAs Substrates by GaAs Surface Pretreatments

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