Determination of the Sb composition profile in MBE-grown GaSb/GaAs structures by high-resolution X-ray diffractometry
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference12 articles.
1. Characteristic properties of III–VA/III-VB heterointerfaces grown by molecular beam epitaxy
2. Surface reaction of III–V compound semiconductors irradiated by As and Sb molecular beams
3. Band lineup inGaAs1−xSbx/GaAs strained-layer multiple quantum wells grown by molecular-beam epitaxy
4. GaAs/GaSb strained‐layer heterostructures deposited by metalorganic vapor phase epitaxy
5. Photoluminescence at high pressures from highly strained MOVPE grown GaAs/GaSb/GaAs heterostructures
Cited by 4 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Blocking of indium incorporation by antimony in III–V-Sb nanostructures;Nanotechnology;2010-03-10
2. Anion control in molecular beam epitaxy of mixed As/Sb III-V heterostructures;Journal of Applied Physics;1999-02-15
3. GaSb molecular beam epitaxy growth on vicinal surfaces studied by RHEED;Journal of Crystal Growth;1996-03
4. Raman spectroscopic study of heterointerfaces in GaSb and InSb on GaAs and in InAs/(AlGa)Sb quantum structures;Philosophical Magazine B;1994-09
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