Blue and blue/green laser diodes and LED-based display devices-Reference-Cited by-同舟云学术

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Blue and blue/green laser diodes and LED-based display devices

Published:1993-02 Issue:1-4 Volume:127 Page:287-290
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Xie W.,Grillo D.C.,Kobayashi M.,He L.,Gunshor R.L.,Jeon H.,Ding J.,Nurmikko A.V.,Hua G.C.,Otsuka N.

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference15 articles.

1. Photoluminescence properties of nitrogen‐doped ZnSe grown by molecular beam epitaxy

2. Photoluminescence properties of nitrogen‐doped ZnSe layers grown by molecular beam epitaxy with low‐energy ion doping

3. p‐type ZnSe by nitrogen atom beam doping during molecular beam epitaxial growth

4. Characteristics of p-type ZnSe Layers Grown by Molecular Beam Epitaxy with Radical Doping

Cited by 8 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Variation with composition of the properties in ZnSxSe1−x;Journal of Crystal Growth;1998-09

2. Investigations on strain relaxation of ZnSxSe1−x layers grown by metalorganic vapor phase epitaxy;Journal of Crystal Growth;1997-02

3. (Cd,Zn)Se multi-quantum-well LEDs: homoepitaxy on ZnSe substrates and heteroepitaxy on buffer layers;Journal of Crystal Growth;1996-02

4. Enhancement of the Schottky barrier height of Au/ZnSSe diodes;Applied Physics Letters;1995-04-10

5. Electrical properties of Schottky contacts toN‐type ZnS0.07Se0.93epilayers;Journal of Applied Physics;1995-04

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