Nanometer scale local epitaxy with silicon MBE-Reference-Cited by-同舟云学术

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Nanometer scale local epitaxy with silicon MBE

Published:1993-02 Issue:1-4 Volume:127 Page:447-450
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Hammerl E.,Wittmann F.,Eisele I.,Heinzel T.,Kühn S.,Lorenz H.,Kotthaus J.P.

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference3 articles.

1. PhD Thesis;Fuenzalida,1985

2. Physics of Semiconductor Devices;Sze,1981

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Tapered GaAs quantum wells and selectively contactable two‐dimensional electron gases grown by shadow masked molecular‐beam epitaxy;Journal of Applied Physics;1995-04

2. MBE-grown vertical silicon MOSFETs with sub-0.3 μm channel lengths;Journal of Crystal Growth;1993-02

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