High sensitivity Hall elements made from Si-doped InAs on GaAs substrates by molecular beam epitaxy-Reference-Cited by-同舟云学术

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High sensitivity Hall elements made from Si-doped InAs on GaAs substrates by molecular beam epitaxy

Published:1995-05 Issue: Volume:150 Page:1302-1306
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Iwabuchi Tatsuro,Ito Takashi,Yamamoto Masaki,Sako Kentaro,Kanayama Yuichi,Nagase Kazuhiro,Yoshida Takashi,Ichimori Fumiaki,Shibasaki Ichiro

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference4 articles.

1. Epitaxial GaAs Hall Generators for High Temperature Applications

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1. Sensitivity of Novel Micro-AlN/GaN/AlN Quantum Well Hall Sensors;IEEE Sensors Journal;2024-02-15

2. Si−doped In0.145Ga0.855As0.123Sb0.877: A novel p−type quaternary alloy with high crystalline quality;Solid State Sciences;2022-01

3. Hall‐effect sensors based on AlGaN/GaN heterojunctions on Si substrates for a wide temperature range;IET Circuits, Devices & Systems;2021-03-29

4. Monolithic High-Mobility InAs on Oxide Grown at Low Temperature;ACS Applied Electronic Materials;2020-06-04

5. Effect of spraying time on the structural and electrical properties of InAs nanowires;Applied Nanoscience;2018-09-17

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