Observation of spatially-indirect transition and accurate determination of band offset ratio by excitation spectroscopy on GaAs/AlGaAs quantum wells lightly doped with Be acceptors
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference19 articles.
1. Festkörperprobleme;Dingle,1975
2. Quantum States of Confined Carriers in Very ThinAlxGa1−xAs-GaAs-AlxGa1−xAsHeterostructures
3. Parabolic quantum wells with theGaAs−AlxGa1−xAssystem
4. Energy-gap discontinuities and effective masses forGaAs−AlxGa1−xAsquantum wells
5. Size quantization and band-offset determination in GaAs-GaAlAs separate confinement heterostructures
Cited by 3 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Valence-band discontinuities between InGaN and GaN evaluated by capacitance-voltage characteristics of p-InGaN/n-GaN diodes;Journal of Electronic Materials;2002-04
2. Band parameters for III–V compound semiconductors and their alloys;Journal of Applied Physics;2001-06
3. Evidence for resonant electron capture and charge buildup in GaAs/AlxGa1−xAs quantum wells;Physical Review B;1996-06-15
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