Cathodoluminescence investigation of SiGe quantum wires fabricated on V-groove patterned Si substrates
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference6 articles.
1. Spectral blue shift of photoluminescence in strained‐layer Si1−xGex/Si quantum well structures grown by gas‐source Si molecular beam epitaxy
2. Photoluminescence from electron‐hole plasmas confined in Si/Si1−xGex/Si quantum wells
3. Realization of crescent‐shaped SiGe quantum wire structures on a V‐groove patterned Si substrate by gas‐source Si molecular beam epitaxy
4. Characterization of Si/Si1−xGex/Si quantum wells by cathodoluminescence imaging and spectroscopy
5. Study of the thermal conversion of semi‐insulating GaAs:Cr with cathodoluminescence, photoluminescence, and secondary ion mass spectrometry
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1. SiGe nanostructures;Surface Science Reports;2009-02-28
2. SiGe nanostructures: new insights into growth processes;Journal of Physics: Condensed Matter;2002-08-22
3. Kinetic evolution of self-organised SiGe nanostructures;Applied Surface Science;2000-08
4. Fabrication of self-organised Ge dots using self-patterned SiGe template layer;Materials Science and Engineering: B;2000-01
5. Local probe techniques for luminescence studies of low-dimensional semiconductor structures;Journal of Applied Physics;1998-08-15
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