Molecular beam epitaxial growth mechanism of ZnSe epilayers on (100) GaAs as determined by reflection high-energy electron diffraction, transmission electron microscopy and X-ray diffraction-Reference-Cited by-同舟云学术

Molecular beam epitaxial growth mechanism of ZnSe epilayers on (100) GaAs as determined by reflection high-energy electron diffraction, transmission electron microscopy and X-ray diffraction

Published:1994-04 Issue:1-4 Volume:138 Page:48-54
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Ruppert P.,Hommel D.,Behr T.,Heinke H.,Waag A.,Landwehr G.

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference16 articles.

1. Blue‐green laser diodes

2. Blue‐green injection laser diodes in (Zn,Cd)Se/ZnSe quantum wells

3. Room temperature continuous operation of blue-green laser diodes

4. RHEED Observation on (001)ZnSe Surface: MBE Surface Phase Diagram and Kinetic Behavior of Zn And Se Adatoms

5. Surface diffusion during molecular-beam epitaxy growth of ZnSe studied by reflection high-energy electron diffraction

Cited by 19 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Mechanism of Cluster Formation on Zinc Selenium/Gallium Arsenic Prepared by Metallorganic Vapor Phase Epitaxy;Journal of The Electrochemical Society;2005

2. Molecular beam epitaxy of compound materials through shadow masks;Physical Review B;2004-10-29

3. Resonance Rayleigh Scattering from Low Dimensional Semiconductors: What is Still to Come;physica status solidi (b);2002-11

4. Nanometer scale surface clustering on ZnSe epilayers;Applied Physics Letters;1998-03-09

5. Deposition and growth with desorption for CdTe molecular beam epitaxy;Journal of Crystal Growth;1998-02