On the mechanism of reflection high-energy electron diffraction oscillations studied by phase-locked epitaxy of ZnSe
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference5 articles.
1. Dynamical calculations for RHEED from MBE growing surfaces. II. Growth interruption and surface recovery
2. Well defined superlattice structures made by phase-locked epitary using RHEED intensity oscillations
3. Phase-Locked Epitaxy Using RHEED Intensity Oscillation
4. Molecular beam epitaxial growth and characterization of ZnSe on GaAs
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1. Epitaxial growth of thin films and quantum structures of II–VI visible-bandgap semiconductors;Molecular Beam Epitaxy;2013
2. Investigations on the growth mechanism of wide-gap II–VI semiconductors by means of reflection high energy electron diffraction;Thin Solid Films;2000-05
3. Reflection high-energy electron diffraction (RHEED) oscillations in phase-locked epitaxy of ZnSe;Journal of Crystal Growth;1999-05
4. Tunneling and energy transfer in ZnSe-based semimagnetic double quantum wells;Physical Review B;1998-07-15
5. Excitonic properties of ZnSe/(Zn,Mg)Se quantum wells: A model study of the tensile-strain situation;Physical Review B;1998-06-15
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