High resolution and conventional transmission electron microscopy of Ga2Se3 thin films grown by vapour phase epitaxy
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference11 articles.
1. Chemical reaction at the ZnSe/GaAs interface detected by Raman spectroscopy
2. Detection of compound formation at the ZnSe/GaAs interface using high resolution transmission electron microscopy (HRTEM)
3. Growth of III-VI Compound Semiconductors by Metalorganic Molecular Beam Epitaxy
4. Growth and characterization of Ga2Te3 films by metalorganic molecular beam epitaxy
5. Molecular‐beam‐epitaxial growth and characterization of In2Te3
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2. Ga2Se3 Nanowires via Au-Assisted Heterovalent Exchange Reaction on GaAs;The Journal of Physical Chemistry C;2020-07-20
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4. First-principles study of the structure and band structure of Ga2Se3;Journal of Physics: Condensed Matter;2013-05-15
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