Arsenic ion implantation in Hg1-xCdxTe

Author:

Baars J.,Seelewind H.,Fritzsche Ch.,Kaiser U.,Ziegler J.

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference16 articles.

1. Electrical properties of ion‐implanted layers in Hg0.79Cd0.21Te

2. Properties of ion-implanted junctions in mercury—cadmium—telluride

3. Boron ion implantation in Hg1−xCdxTe

4. L.O. Bubulac, W.E. Tennant, S.H. Shin, C.C. Wang, M. Lanir, E.G. Gertner and E.D. Marshall. in: Proc. 11th Intern. Conf. on Solid State Devices, Tokyo, 1979

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