Theoretical and experimental description of the growth of GaAs and AlxGa1−xAs in the pulse reactor-Reference-Cited by-同舟云学术

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Theoretical and experimental description of the growth of GaAs and AlxGa1−xAs in the pulse reactor

Published:1990-04 Issue:1-2 Volume:102 Page:1-15
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

van Sark W.G.J.H.M.,van Suchtelen J.,Hogenkamp J.E.M.,de Croon M.H.J.M.,Velthuis R.A.,Giling L.J.

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference19 articles.

1. Metalorganic chemical vapor deposition of III‐V semiconductors

2. Metal-organic vapor phase epitaxy of compound semiconductors

3. Gas phase depletion and flow dynamics in horizontal MOCVD reactors

4. Analytical models for growth by metal organic vapour phase epitaxy: I. Isothermal models

5. The pulse reactor—A high-efficiency, high-precision low-pressure MOCVD machine

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Deposition of Ceramic Films by A Novel Pulsed-Gas Mocvd Technique;MRS Proceedings;1992

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