Luminescence and electrical properties of ZnSe grown by photo-assisted OMVPE
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference9 articles.
1. Coherent Growth of ZnSe on GaAs by MOCVD
2. Growth Rate Enhancement by Xenon Lamp Irradiation in Organometallic Vapor-Phase Epitaxy of ZnSe
3. Investigations of photo-association mechanism for growth rate enhancement in photo-assisted OMVPE of ZnSe and ZnS
4. Gas-Phase and Surface Reactions in Xenon Lamp-Assisted Organometallic Vapor-Phase Epitaxy of ZnSe
5. Use of Ethyliodide in Preparation of Low-Resistivity n-Type ZnSe by Metalorganic Vapor Phase Epitaxy
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1. Radical-Beam Gettering Epitaxy of ZnO Films under UV Irradiation;Inorganic Materials;2005-06
2. Effects of wavelength upon photoluminescence properties of ZnTe layers grown by photo-assisted MOVPE;Journal of Crystal Growth;2000-06
3. Thermoelectric properties of (ZnSe)x(CdS)1−xfilms deposited by thermal evaporation;Radiation Effects and Defects in Solids;1998-07
4. Growth of ZnSe films on GaAs(100) substrate by x-ray-enhanced, vapor-phase epitaxy;Semiconductors;1997-01
5. Structural and optical studies on vacuum-evaporated ZnSexCdS1 − x alloy films;Journal of Alloys and Compounds;1996-02
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