Monolayer epitaxy of ZnSe On GaAs substrates by alternating adsorption of diethylzinc and hydrogenselenide
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference12 articles.
1. Extended Abstracts 16th (1984 Intern.) Conf. on Solid State Devices and Materials;Suntola,1984
2. Growth process in atomic layer epitaxy of Zn chalcogenide single crystalline films on (100)GaAs
3. Photoluminescence properties of ZnSe single crystalline films grown by atomic layer epitaxy
4. Intensity variations of reflection high-energy electron diffraction during atomic layer epitaxial growth and sublimation of Zn chalcogenides
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1. Low temperature epitaxy of reactively sputtered ZnO on sapphire;Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;2004-11
2. Atomic layer deposition of ZnS thin films based on diethyl zinc and hydrogen sulfide;Journal of Crystal Growth;2002-02
3. The properties of ZnSc layers grown on GaAs and Si substrates by atomic layer epitaxy;Materials Chemistry and Physics;1998-03
4. Effect of Atomic Layer Epitaxy Growth Conditions on the Properties of ZnS Epilayers on (100)-Si Substrate;Japanese Journal of Applied Physics;1996-10-15
5. Atomic Layer Epitaxy Growth of ZnSe on (100) GaAs Using Metalorganic Vapor-Phase Epitaxy System;Japanese Journal of Applied Physics;1996-08-15
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