Effect of cap layer and cooling atmosphere on the hole concentration of p(Zn)-AlGaInP grown by organometallic vapor phase epitaxy
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference19 articles.
1. A study of p-type doping for AlGaInP grown by low-pressure MOCVD
2. MOVPE of AlGaInP/GaInP heterostructures for visible lasers
3. Growth of high-quality inGaAIP epilayers by MOCVD using methyl metalorganics and their application to visible semiconductors lasers
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3. Growth of heavily Zn-doped InGaAs at low temperature by LP-MOCVD;Journal of Crystal Growth;2004-02
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