TEM analysis of voids in UHV-deposited amorphous Si layers used for lateral solid phase epitaxial growth-Reference-Cited by-同舟云学术

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TEM analysis of voids in UHV-deposited amorphous Si layers used for lateral solid phase epitaxial growth

Published:1992-03 Issue:1-2 Volume:118 Page:125-134
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Theunissen M.J.J.,van Rooij-Mulder J.M.L.,Bulle-Lieuwma C.W.T.,Vandenhoudt D.E.W.,Gravesteijn D.J.,van de Walle G.F.A.

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference24 articles.

1. Solid-Phase Lateral Epitaxial Growth onto Adjacent SiO2Film from Amorphous Silicon Deposited on Single-Crystal Silicon Substrate

2. Solid‐phase lateral epitaxy of chemical‐vapor‐deposited amorphous silicon by furnace annealing

3. Lateral solid phase epitaxy of amorphous Si films on Si substrates with SiO2patterns

4. A high-performance stacked-CMOS SRAM cell by solid phase growth technique;Uemoto,1990

5. Si-gate CMOS devices on a Si lateral solid-phase epitaxial layer

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Origins of Growth Stresses in Amorphous Semiconductor Thin Films;Physical Review Letters;2003-08-28

2. Influence of Initial Amorphous Layer Deposition Temperature on Lateral solid-Phase Epitaxy of Silicon;Japanese Journal of Applied Physics;2002-02-15

3. Ordering of amorphous silicon during solid-phase epitaxy studied by scanning tunneling microscopy;Physical Review B;1994-09-15

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