Deformation of V-grooves on InP substrate by heat treatment
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference11 articles.
1. Single Transverse Mode Operation of Terraced Substrate GaInAsP/InP Lasers at 1.3 µm Wavelength
2. InGaAsP/InP buried crescent laser emitting at 1.3 μm with very low threshold current
3. V-grooved substrate buried heterostructure InGaAsP/InP laser
4. Prediction of scattering cross-section reductions due to plate orthogonality errors in trihedral radar reflectors
Cited by 6 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Mass transport: semiconductor microstructure fabrication by surface energy;Materials Science and Engineering: R: Reports;2003-10
2. A Theoretical Model of InP Mass Transport;Japanese Journal of Applied Physics;1993-01-15
3. Surface‐energy‐induced mass‐transport phenomenon in annealing of etched compound semiconductor structures: Theoretical modeling and experimental confirmation;Journal of Applied Physics;1990-03
4. Characterization of InGaAsP surface corrugation used for distributed feedback lasers by means of Raman spectroscopy;Applied Physics Letters;1986-08-11
5. LPE growth of InP and related alloys;Progress in Crystal Growth and Characterization;1986-01
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