Inhomogeneity in a semi-insulating indium phosphide ingot-Reference-Cited by-同舟云学术

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Inhomogeneity in a semi-insulating indium phosphide ingot

Published:1991-08 Issue:1-2 Volume:113 Page:39-44
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

L'Haridon H.,Callec R.,Coquillé R.,Favennec P.N.,Fillard J.P.,Gall P.,Gauneau M.,Le Guillou Y.

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference10 articles.

1. Observation of cellular structures of defects in semi-insulating InP-Fe

2. Proc. 1st Intern. Conf. on InP and Related Materials;Erman,1989

3. Spatial distribution of donors in silicon implanted iron and iron-gallium doped semi-insulating indium phosphide

4. Assessment of Fe‐doped semi‐insulating InP crystals by scanning photoluminescence measurements

5. Synthesis, crystal growth and characterization of InP

Cited by 6 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Photoluminescence characteristics of InP annealed in phosphorus and iron phosphide ambiences;Materials Science in Semiconductor Processing;2005-08

2. Photoluminescence assessment of undoped semi-insulating InP wafers obtained by annealing in iron phosphide vapour;Semiconductor Science and Technology;2002-05-24

3. Characterization of defects and whole wafer uniformity of annealed undoped semi-insulating InP wafers;Materials Science and Engineering: B;2002-04

4. Preparation and characterization of semi-insulating 2 in InP wafers having a low Fe content by wafer annealing;Materials Science and Engineering: B;1994-12

5. Non-uniformity of Fe doping in semi-insulating LEC-grown InP and its characterization by various mapping methods;Materials Science and Engineering: B;1994-12

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