Producing extended area deposits of uniform thickness by a new chemical vapor deposition technique-Reference-Cited by-同舟云学术

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Producing extended area deposits of uniform thickness by a new chemical vapor deposition technique

Published:1976-10 Issue:3 Volume:35 Page:257-261
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Bryant W.A.

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference14 articles.

1. Proc. 4th Intern. Conf. on Chemical Vapor Deposition;Yang,1973

2. Proc. 2nd Intern. Conf. on Chemical Vapor Deposition;Huegel,1971

3. K.S.G. Pertwee, US Patent 3,127,641 (1964).

4. High Temperature Materials;Roberts,1969

5. M.S. Thesis;Bryant,1971

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1. Porous Membranes as Sacrificial Layers Enabling Conformal Chemical Vapor Deposition Involving Multiple Film-Forming Species;ACS Applied Materials & Interfaces;2020-10-30

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3. Chemical Vapour Infiltration;Engineering Materials and Processes;2010

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5. References;The Foundations of Vacuum Coating Technology;2003

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