Effects of high source flow and high pumping speed on gas source molecular beam epitaxy / chemical beam epitaxy-Reference-Cited by-同舟云学术

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Effects of high source flow and high pumping speed on gas source molecular beam epitaxy / chemical beam epitaxy

Published:1990-10 Issue:1-4 Volume:105 Page:316-325
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

McCollum M.J.,Jackson S.L.,Szafranek I.,Stillman G.E.

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference23 articles.

1. Characterization of high‐purity Si‐doped molecular beam epitaxial GaAs

2. Spectroscopic studies of the influence of intentionally increased CO partial pressure on the incorporation of residual C impurities in molecular beam epitaxy GaAs

3. Effect of arsenic source on the growth of high‐purity GaAs by molecular beam epitaxy

4. On residual carbon acceptors in molecular‐beam epitaxial GaAs

5. Reduction of the acceptor impurity background in GaAs grown by molecular beam epitaxy

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Chemical Beam Epitaxy;Encyclopedia of Materials: Science and Technology;2001

2. Electrical, optical properties, and surface morphology of high purity InP grown by chemical beam epitaxy;Journal of Applied Physics;1994-11

3. Growth of high-purity InP by chemical beam epitaxy;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;1993-05

4. Progress in chemical beam epitaxy;Journal of Crystal Growth;1990-10

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