Transient behavior in RHEED intensity oscillations observed in chemical beam epitaxy of InP-Reference-Cited by-同舟云学术

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Transient behavior in RHEED intensity oscillations observed in chemical beam epitaxy of InP

Published:1990-10 Issue:1-4 Volume:105 Page:221-226
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Morishita Yoshitaka,Imaizumi Masayuki,Gotoda Mitsunobu,Maruno Shigemitsu,Nomura Yoshinori,Ogata Hitoshi

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference15 articles.

1. Bonding direction and surface‐structure orientation on GaAs (001)

2. Analysis of reflection high-energy electron-diffraction data from reconstructed semiconductor surfaces

3. Dynamics of film growth of GaAs by MBE from Rheed observations

4. Damped oscillations in reflection high energy electron diffraction during GaAs MBE

5. RHEED oscillation studies of MBE growth kinetics and lattice mismatch strain-induced effects during InGaAs growth on GaAs(100)

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Epitaxial layer morphology of highly strained GaInAs/InP multiple quantum well structures grown by CBE;Microelectronics Journal;1997-10

2. Surface morphology of in selective area growth by chemical beam epitaxy;Journal of Crystal Growth;1997-01

3. Determination of the excess surface arsenic concentration in the metalorganic molecular beam epitaxial growth of GaAs using TMGa and As2;Applied Physics Letters;1995-08-14

4. Direct observation of growth rate transients during homoepitaxy of GaAs;Thin Solid Films;1993-03

5. Growth mechanism studies in CBE/MOMBE;Journal of Crystal Growth;1991-01

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