A study of metalorganic molecular beam epitaxy growth of InAs by mass spectrometry and reflection high-energy electron diffraction
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference9 articles.
1. Metalorganic CVD of GaAs in a molecular beam system
2. Chemical beam epitaxy of InP and GaAs
3. Molecular Beam Epitaxial Growth of GaAs Using Triethylgallium and Arsine
4. III–V Heterostructures for Electronic/Photonic Devices;Fraas,1989
5. III–V Heterostructures for Electronic/Photonic Devices;Houng,1989
Cited by 3 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Identification of volatile products in low pressure hydrocarbon electron cyclotron resonance reactive ion etching of InP and GaAs;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;1993-11
2. The effects of arsenic overpressure in metalorganic molecular beam epitaxy of GaAs and InAs;Journal of Crystal Growth;1990-10
3. Progress in chemical beam epitaxy;Journal of Crystal Growth;1990-10
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